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Modern technology has
evolved to a stage that careful manipulation of a single spin or charge
carrier is no longer a formidable task. Our research focuses on a
particular aspect of the electrons - their spin degrees of freedom, and
spin information can be stored, transferred, and processed all the way
from classical to quantum levels.
We can efficiently harvest the mutual interactions between spins
and ions in nanoelectronic devices (ie, spiontronics) for advanced spin control
and monitoring. The freedom to combine complex spin systems, ion systems,
topological states, and superconductors grants us the unique advantage in
bottom-up materials design and construction, while still
keeping mass production and integration in check. Our program has
a strong emphasis on the development of novel materials and devices
towards more powerful yet more energy efficient information processing
units, into an era beyond silicon. Research Interests: * Topological quantum computing
on low-dimensional spin systems * Spin memory and logic devices * Superconducting
microwave circuits * Spiontronics for Field
Programmable Neural network Arrays (FPNA) * RRAM
for Compute in Memory architectures Funding: >
Ontario
Early Researcher Awards >
Canada
First Research Excellence Fund - Transformative Quantum
Technologies >
NSERC,
Discovery, Engage >
Mitacs, Accelerate >
ECE
department research stimulation grant Courses taught: (please log in to your LEARN account to access the course
notes and updates) •
NE226 “Characterization
of Materials” •
ECE231 “Semiconductor Physics and
Devices” •
NE353 “ Nano
Probing and Lithography” •
ECE403 “Thermodynamics” •
ECE405D “Superconducting Quantum
Circuits” •
NANO600 “Introduction
to Nanotechnology” •
NANO601 “Characterization
of Nanomaterials” •
ECE630 “Physics and
Models of Semiconductor Devices” •
NANO701 “Solid State
Physics and Chemistry” •
NANO702 “Nanoscale
Phenomena” •
ECE730-T19 “Magnetism
and Spintronics” |
(400 nm OD, 100 nm width)
A picture carved into diamond (20 μm x 20 μm) |
(100 nm line width)
Array of diamond nano-pillars (100 nm diameter) |
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(100 nm line width)
Angle-resolved
photoemission spectroscopy (ARPES) mapping on 2x2 Mn intercalated TaS2
at Canadian Light Source (CLS) synchrotron beam line, clearly revealing
the existence of a flatband across the whole
k-space |
Back-end-of-line (BEOL) integration of battery-like,
reconfigurable memristors on TSMC CMOS chips Mn intercalated transition-metal dichalcogenide (TMD) TaS2 |
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Anisotropic dry etching on Si Anisotropic wet etching on Si mask
diameter 1.5 µm, pillar depth 17 µm mask width 300 nm, trench depth 2 µm mask width 2 µm, spacing 2 µm mask width 1.5 µm, depth 13 µm |
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