Modern technology has evolved to a stage that careful manipulation of a single spin or charge carrier is no longer a formidable task. Our research focuses on a particular aspect of the electrons - their spin degrees of freedom, and spin information can be stored, transferred, and processed all the way from classical to quantum levels. We can efficiently harvest the mutual interactions between spins and ions in nanoelectronic devices (ie, spin-iontronics) for advanced spin control and monitoring. The freedom to combine complex spin systems, ion systems, topological states, and superconductors grants us the unique advantage in bottom-up materials design and construction, while still keeping mass production and integration in check. Our program has a strong emphasis on the development of novel materials and devices towards more powerful yet more energy efficient information processing units, into an era beyond silicon. Research Interests: * Topological quantum computing on low-dimensional spin systems * Spin memory and logic devices * Superconducting microwave circuits * Spiontronics for Field Programmable Neural network Arrays (FPNA) * RRAM for Compute in Memory architectures Funding: > Ontario Early Researcher Awards > Canada First Research Excellence Fund - Transformative Quantum Technologies > NSERC, Discovery, Engage > Mitacs, Accelerate > ECE department research stimulation grant Courses taught: (please log in to your LEARN account to access the course notes and updates) • NE226 “Characterization of Materials” • ECE231 “Semiconductor Physics and Devices” • NE353 “ Nano Probing and Lithography” • ECE403 “Thermodynamics” • ECE405D “Superconducting Quantum Circuits” • NANO600 “Introduction to Nanotechnology” • NANO601 “Characterization of Nanomaterials” • ECE630 “Physics and Models of Semiconductor Devices” • NANO701 “Solid State Physics and Chemistry” • NANO702 “Nanoscale Phenomena” • ECE730-T19 “Magnetism and Spintronics” CV The lab The group Useful Links IQC E&CE UW	A tiny diamond ring (400 nm OD, 100 nm width) A picture carved into diamond (20 μm x 20 μm)	Nano “QNC” cut out of diamond (100 nm line width) Array of diamond nano-pillars (100 nm diameter)
	Concentric diamond rings (100 nm line width) Angle-resolved photoemission spectroscopy (ARPES) mapping on 2x2 Mn intercalated TaS2 at Canadian Light Source (CLS) synchrotron beam line, clearly revealing the existence of a flatband across the whole k-space	Back-end-of-line (BEOL) integration of battery-like, reconfigurable memristors on TSMC CMOS chips Mn intercalated transition-metal dichalcogenide (TMD) TaS2
Anisotropic dry etching on Si Anisotropic wet etching on Si mask diameter 1.5 µm, pillar depth 17 µm mask width 300 nm, trench depth 2 µm mask width 2 µm, spacing 2 µm mask width 1.5 µm, depth 13 µm