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A tiny diamond ring (400 nm OD, 100 nm width) |
Concentric diamond rings (100nm line width) |
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Array of diamond nano-pillars (100nm diameter) |
Nano
“QNC” cut out of diamond (100 nm line width) |
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Useful Links |
Modern
technology has evolved to a stage such that careful manipulation of a small
group of electrons, or even a single electron, is no longer a formidable
task. Our research focuses on a particular aspect of the electrons – their
spin degrees of freedom. We construct spin-based nanoelectronic
(a.k.a., spintronic) devices with improved performances and scalability by
taking advantage of the interplay between a few fundamental spin systems:
magnetism, superconductivity, and the quantum spin Hall state. Our program
has a strong emphasis on the development of novel materials, in search for an
ideal platform that will take us to an era beyond silicon.
Research
Interests: *
Topological quantum computing on low-dimensional
spin systems *
Spin memory and logic devices *
Spiontronics for
neuromorphic computing Funding: >
Quantum quest seed fund, Transformative Quantum
Technologies (TQT) >
Transformative Quantum Technologies, CFREF >
Ontario Early Researcher Awards >
ECE department research stimulation grant >
NSERC, Discovery >
NCERC, Engage Courses: (please log in to
your LEARN account to access the course notes and updates) •
NE226
“Characterization of Materials” •
ECE730-T19
“Magnetism and Spintronics” •
NANO701
“Solid State Physics and Chemistry” •
NANO702
“Nanoscale Phenomena” •
ECE403
“Thermodynamics” •
ECE630
“Physics and Models of Semiconductor Devices” •
NANO600
“Introduction to Nanotechnology” •
NANO601
“Characterization of Nanomaterials” •
ECE 231
“Semiconductor Physics and Devices” •
ECE 405D
“Superconducting Quantum Circuits” |
Very dense array of nano-pillars |
H2/CH4 Plasma in diamond PECVD |
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Anisotropic wet etching on Si (viewed from a cleaved edge, mask width 2µm, spacing 2µm) |
Anisotropic wet etching
on Si (viewed from a cleaved edge, depth 13µm, mask width 1.5µm) |
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Anisotropic dry etching on Si -
mask width 1.5µm, trench depth 10µm |
Anisotropic
dry etching on Si - mask width 1.5µm, trench depth 25µm |
Anisotropic dry etching on Si -
mask diameter 1.5µm, pillar depth 17µm |
Anisotropic
dry etching on Si - mask width 300nm, trench depth 2µm |
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