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A tiny diamond ring (400 nm OD, 100 nm width) |
Concentric diamond rings (100 nm line width) |
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Array of diamond nano-pillars (100 nm diameter) |
Nano “QNC” cut out of diamond (100 nm line width) |
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Useful Links |
Modern
technology has evolved to a stage that careful manipulation of a single spin
or charge carrier is no longer a formidable task. Our research focuses on a
particular aspect of the electrons - their spin degrees of freedom, and spin
information can be stored, transferred, and processed all the way from classical
to quantum levels. We can efficiently harvest
the mutual interactions between spins and ions in nanoelectronic
devices (ie, spin-iontronics) for advanced spin control
and monitoring. The freedom to combine complex spin systems, ion systems, topological
states, and superconductors grants us the unique advantage in bottom-up
materials design and construction, while still keeping
mass production and integration in check. Our program has a strong emphasis
on the development of novel materials and devices towards more powerful yet
more energy efficient information processing units, into an era beyond
silicon. Research Interests: * Topological quantum computing on
low-dimensional spin systems * Spin memory and logic devices * Superconducting
microwave circuits * Spiontronics for Field
Programmable Neural network Arrays (FPNA) * ReRAM
for Compute in Memory architectures Funding: >
Ontario
Early Researcher Awards >
Canada
First Research Excellence Fund - Transformative Quantum Technologies >
NSERC,
Discovery,
Engage >
Mitacs, Accelerate >
ECE
department research stimulation grant Courses taught: (please log in to
your LEARN account to access the course notes and updates) •
ECE231 “Semiconductor
Physics and Devices” •
ECE403 “Thermodynamics” •
ECE405D “Superconducting Quantum Circuits” •
ECE630 “Physics and
Models of Semiconductor Devices” •
ECE730-T19 “Magnetism and
Spintronics” •
NE226 “Characterization
of Materials” •
NE353 “ Nano Probing and Lithography” •
NANO600 “Introduction to
Nanotechnology” •
NANO601 “Characterization
of Nanomaterials” •
NANO701 “Solid State
Physics and Chemistry” •
NANO702 “Nanoscale
Phenomena” |
H2/CH4 Plasma in diamond PECVD Mn intercalated transition metal dichalcogenide (TMD) TaS2 |
Back end of the line (BEOL)
integration of battery-like, reconfigurable memristors on TSMC CMOS chips Angle-resolved
photoemission spectroscopy (ARPES) mapping on 2x2 Mn intercalated TaS2
at Canadian Light Source (CLS) synchrotron beam line |
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Anisotropic wet etching on Si
(viewed from a
cleaved edge, mask width 2 µm, spacing 2 µm) |
Anisotropic wet etching on Si
(viewed from a cleaved edge, depth 13 µm, mask width 1.5 µm) |
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Anisotropic dry etching on Si mask width 1.5 µm, trench depth 10 µm |
Anisotropic dry etching on Si mask width 1.5 µm, trench depth 25 µm |
Anisotropic dry etching on Si mask diameter 1.5 µm, pillar depth 17 µm |
Anisotropic dry etching on Si mask width 300 nm, trench depth 2 µm |
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