A tiny diamond ring (400 nm OD, 100 nm width)		Concentric diamond rings (100 nm line width)
				Array of diamond nano-pillars (100 nm diameter)		Nano “QNC” cut out of diamond (100 nm line width)
CV The lab The group Useful Links IQC E&CE UW	Modern technology has evolved to a stage such that careful manipulation of a small group of electrons, or even a single electron, is no longer a formidable task. Our research focuses on a particular aspect of the electrons – their spin degrees of freedom. We construct spin-and ion based nanoelectronic devices (spin-iontronics) with improved performances and scalability by taking advantage of the interplay between a few fundamental systems: magnetism, superconductivity, quantum spin Hall state, ion intercalation and channeling. Our program has a strong emphasis on the development of novel materials, in search for ideal platforms that will take us to an era beyond silicon and the prevailing von Neumann architectures. Research Interests: * Topological quantum computing on low-dimensional spin systems * Spin memory and logic devices * Superconducting microwave circuits * Spiontronics for Field Programmable Neural network Arrays (FPNA) * ReRAM for Compute in Memory architectures Funding: > Ontario Early Researcher Awards > Canada First Research Excellence Fund - Transformative Quantum Technologies > NSERC, Discovery, Engage > Mitacs, Accelerate > ECE department research stimulation grant Courses taught: (please log in to your LEARN account to access the course notes and updates) • ECE231 “Semiconductor Physics and Devices” • ECE403 “Thermodynamics” • ECE405D “Superconducting Quantum Circuits” • ECE630 “Physics and Models of Semiconductor Devices” • ECE730-T19 “Magnetism and Spintronics” • NE226 “Characterization of Materials” • NE353 “ Nano Probing and Lithography” • NANO600 “Introduction to Nanotechnology” • NANO601 “Characterization of Nanomaterials” • NANO701 “Solid State Physics and Chemistry” • NANO702 “Nanoscale Phenomena”			H2/CH4 Plasma in diamond PECVD Mn intercalated transition metal dichalcogenide (TMD) TaS2		Back end of the line (BEOL) integration of battery-like, reconfigurable memristors on TSMC CMOS chips Angle-resolved photoemission spectroscopy (ARPES) mapping on 2x2 Mn intercalated TaS2 at Canadian Light Source (CLS) synchrotron beam line
				Anisotropic wet etching on Si (viewed from a cleaved edge, mask width 2 µm, spacing 2 µm)		Anisotropic wet etching on Si (viewed from a cleaved edge, depth 13 µm, mask width 1.5 µm)
Anisotropic dry etching on Si mask width 1.5 µm, trench depth 10 µm		Anisotropic dry etching on Si mask width 1.5 µm, trench depth 25 µm	Anisotropic dry etching on Si mask diameter 1.5 µm, pillar depth 17 µm		Anisotropic dry etching on Si mask width 300 nm, trench depth 2 µm