Description: Description: Description: C:\DATA\back-up\UW\data\SEM\EBL\miao\Dec13\ring100nm11min1x37.tifA tiny diamond ring

(400 nm OD, 100 nm width)

Concentric diamond rings

(100 nm line width)

Array of diamond nano-pillars

(100 nm diameter)

Description: Description: C:\DATA\back-up\UW\data\SEM\EBL\miao\Dec13\letter100nm11min1x56.tifNano “QNC” cut out of diamond

(100 nm line width)

CV

The lab

The group

 

 

Useful Links

    IQC

    E&CE

    UW

 

Modern technology has evolved to a stage that careful manipulation of a single spin or charge carrier is no longer a formidable task. Our research focuses on a particular aspect of the electrons - their spin degrees of freedom, and spin information can be stored, transferred, and processed all the way from classical to quantum levels.  We can efficiently harvest the mutual interactions between spins and ions in nanoelectronic devices (ie, spin-iontronics) for advanced spin control and monitoring. The freedom to combine complex spin systems, ion systems, topological states, and superconductors grants us the unique advantage in bottom-up materials design and construction, while still keeping mass production and integration in check. Our program has a strong emphasis on the development of novel materials and devices towards more powerful yet more energy efficient information processing units, into an era beyond silicon.

Research Interests:

*      Topological quantum computing on low-dimensional spin systems

*      Spin memory and logic devices

*      Superconducting microwave circuits

*      Spiontronics for Field Programmable Neural network Arrays (FPNA)

*      ReRAM for Compute in Memory architectures

 

Funding:

>        Ontario Early Researcher Awards

>        Canada First Research Excellence Fund - Transformative Quantum Technologies

>        NSERC, Discovery, Engage

>        Mitacs, Accelerate

>        ECE department research stimulation grant

 

Courses taught: (please log in to your LEARN account to access the course notes and updates)

          ECE231              Semiconductor Physics and Devices”

          ECE403              Thermodynamics”

          ECE405D           Superconducting Quantum Circuits”

          ECE630              Physics and Models of Semiconductor Devices”

          ECE730-T19      Magnetism and Spintronics”

          NE226                Characterization of Materials”

          NE353                 Nano Probing and Lithography”

          NANO600          Introduction to Nanotechnology”

          NANO601          Characterization of Nanomaterials”

          NANO701          Solid State Physics and Chemistry”

         NANO702          Nanoscale Phenomena”

Description: Description: C:\DATA\back-up\UW\ebooks\Docs\Lab\Plasma.jpgH2/CH4 Plasma in diamond PECVD

Mn intercalated transition metal dichalcogenide (TMD) TaS2

A close-up of a graph

Description automatically generatedBack end of the line (BEOL) integration of battery-like, reconfigurable memristors on TSMC CMOS chips

Angle-resolved photoemission spectroscopy (ARPES) mapping on 2x2 Mn intercalated TaS2 at Canadian Light Source (CLS) synchrotron beam line

KOH_12min_edge7Anisotropic wet etching on Si

 (viewed from a cleaved edge, mask width 2 µm, spacing 2 µm)

KOH 1.5w 13d 10min0Anisotropic wet etching on Si

(viewed from a cleaved edge, depth 13 µm, mask width 1.5 µm)

line2.5w 10d 20cycle 1Anisotropic dry etching on Si

mask width 1.5 µm, trench depth 10 µm

Anisotropic dry etching on Si

mask width 1.5 µm, trench depth 25 µm

dot2.5w 17d 40cycle9Anisotropic dry etching on Si

mask diameter 1.5 µm, pillar depth 17 µm

300nm line 20cycle 0Anisotropic dry etching on Si

mask width 300 nm, trench depth 2 µm